Effect of Side Lobe Intensity and Photon Shot Noise Effect on the Missing Hole Phenomenon in Extreme Ultraviolet Lithography

被引：2

作者：

Kim, Jung Sik ^{[1
]}

Hong, Seongchul ^{[2
]}

Jang, Yong Ju ^{[1
]}

Ahn, Jinho ^{[1
,2
,3
]}

机构：

[1] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 04763, South Korea

[2] Hanyang Univ, Dept Mat Sci & Engn, Seoul 04763, South Korea

[3] Hanyang Univ, Inst Nano Sci & Technol, Seoul 04763, South Korea

来源：

KOREAN JOURNAL OF METALS AND MATERIALS | 2017年 / 55卷 / 02期

关键词：

EUV phase shift mask; lithography simulation; missing hole; photon shot noise effect; side lobe intensity; ABSORBER;

D O I：

10.3365/KJMM.2017.55.2.139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The missing hole phenomenon in a wafer pattern is a critical issue in extreme ultraviolet lithography. It occurs randomly, even when the process conditions are consistent. The main reason for this phenomenon is thought to be the photon shot noise effect, which is a random reaction between photons and photoresist particles. We speculate that side lobe intensity can be another reason, since the missing hole is affected by the light distribution of the main hole pattern. To confirm the effect of side lobe intensity and photon shot noise on the missing hole phenomenon, we used an attenuated phase shift mask (PSM), whose reflectivity can be changed without varying the total absorber stack thickness. The results show that the photon shot noise effect and the side lobe intensity are both affected by the reflectivity of the PSM and are the critical factors for the missing holes.

引用

页码：139 / 143

页数：5

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