Parallel magnetic-field tuning of valley splitting in AlAs two-dimensional electrons

被引：11

作者：

Gokmen, T. ^{[1
]}

Padmanabhan, Medini ^{[1
]}

Gunawan, O. ^{[1
]}

Shkolnikov, Y. P. ^{[1
]}

Vakili, K. ^{[1
]}

De Poortere, E. P. ^{[1
]}

Shayegan, M. ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 23期

关键词：

aluminium compounds; conduction bands; crystal field interactions; III-V semiconductors; semiconductor quantum wells; two-dimensional electron gas;

D O I：

10.1103/PhysRevB.78.233306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the two valleys by different amounts. The measured density imbalance between the two valleys, which is a measure of the valley susceptibility with respect to parallel magnetic field, is enhanced compared to the predictions of noninteracting calculations, reflecting the role of electron-electron interaction.

引用

页数：4

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