F+ Implants in Crystalline Si: The Si Interstitial Contribution

被引：0

作者：

Lopez, Pedro ^{[1
]}

Pelaz, Lourdes ^{[1
]}

Duffy, Ray ^{[2
]}

Meunier-Beillard, P. ^{[2
]}

Roozeboom, F. ^{[3
]}

van der Tak, K. ^{[4
]}

Breimer, P. ^{[4
]}

van Berkum, J. G. M. ^{[4
]}

Verheijen, M. A. ^{[4
]}

Kaiser, M. ^{[4
]}

机构：

[1] Univ Valladolid, ETSI Telecommun, Elect & Elect, Campus Miguel Delibes S-N, E-47011 Valladolid, Spain

[2] NXP Semicond, B-3001 Heverlee, Belgium

[3] NXP Semicond, NL-5656 Eindhoven, Netherlands

[4] Philips Res Lab Eindhoven, NL-5656 Eindhoven, Netherlands

来源：

DOPING ENGINEERING FOR FRONT-END PROCESSING | 2008年 / 1070卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work the Si interstitial contribution of F+ implants in crystalline Si is quantified by the analysis of extended defects and B diffusion in samples implanted with 25 keV F+ and/or 40 keV Si+. We estimate that approximately 0.4 to 0.5 Si interstitials are generated per implanted F+ ion, which is in good agreement with the value resulting from the net separation of Frenkel pairs obtained from MARLOWE simulations. The damage created by F+ implants in crystalline Si may explain the presence of extended defects in F-enriched samples and the evolution of B profiles during annealing. For short anneals, B diffusion is reduced when F+ is co-implanted with Si+ compared to the sample only implanted with Si+, due to the formation of more stable defects that set a lower Si interstitial supersaturation. For longer anneals, when defects have dissolved and TED is complete, B diffusion is higher because the additional damage created by the F+ implant has contributed to enhance B diffusion.

引用

页码：279 / +

页数：2

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