Electrical and optical properties of 8-12μm GaAs AlGaAs quantum well infrared photodetectors in 256 x 256 focal plane arrays

被引：0

作者：

Walther, M ^{[1
]}

Fuchs, F ^{[1
]}

Schneider, H ^{[1
]}

Fleissner, J ^{[1
]}

Schönbein, C ^{[1
]}

Pletschen, W ^{[1
]}

Schwarz, K ^{[1
]}

Rehm, R ^{[1
]}

Bihlmann, G ^{[1
]}

Braunstein, J ^{[1
]}

Koidl, P ^{[1
]}

Ziegler, J ^{[1
]}

Becker, G ^{[1
]}

机构：

[1] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

来源：

INTERSUBBAND TRANSITIONS IN QUANTUM WELLS: PHYSICS AND DEVICES | 1998年

关键词：

quantum well infrared detector; focal plane arrays; intersubband transitions; long-wavelength infrared (LWIR); gallium arsenide (GaAs);

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Optical and electrical properties of photoconductive GaAs/AlGaAs quantum well intersubband detectors in 256 x 256 focal plane arrays (FPAs) for thermal imaging in the 8-12 mu m range have been investigated. In order to determine responsivity, dark current and uniformity of individual detector elements in a FPA arrangement, 256 x 256 FPA detector chips have been flip-chip bonded to silicon fan-out structures. The fan-out structures provide electrical contact to 100 pixels in the FPA and allow optical and electrical characterization of single pixel elements in a FPA.

引用

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页码：207 / 212

页数：6

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