Room Temperature Gate-tunable Negative Differential Resistance in MoS2/hBN/WSe2 Heterostructures

被引：0

作者：

Movva, Hema C. P. ^{[1
]}

Kang, Sangwoo ^{[1
]}

Rai, Amritesh ^{[1
]}

Kim, Kyounghwan ^{[1
]}

Fallahazad, Babak ^{[1
]}

Taniguchi, Takashi ^{[2
]}

Watanabe, Kenji ^{[2
]}

Tutuc, Emanuel ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 305044, Japan

来源：

2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2016年

关键词：

TUNNEL-DIODES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页数：2

共 50 条

[31] Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors
Lee, Inyeal
Rathi, Servin
Lim, Dongsuk
Li, Lijun
Park, Jinwoo
Lee, Yoontae
Yi, Kyung Soo
Dhakal, Krishna P.
Kim, Jeongyong
Lee, Changgu
Lee, Gwan-Hyoung
Kim, Young Duck
Hone, James
Yun, Sun Jin
Youn, Doo-Hyeb
Kim, Gil-Ho
ADVANCED MATERIALS, 2016, 28 (43) : 9519 - 9525
[32] Highly Strain-Tunable Interlayer Excitons in MoS2/WSe2 Heterobilayers
Cho, Chullhee
Wong, Joeson
Taqieddin, Amir
Biswas, Souvik
Aluru, Narayana R.
Nam, SungWoo
Atwater, Harry A.
NANO LETTERS, 2021, 21 (09) : 3956 - 3964
[33] Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures
Pan, Haiyang
Singh, Anil Kumar
Zhang, Chusheng
Hu, Xueqi
Shi, Jiayu
An, Liheng
Wang, Naizhou
Duan, Ruihuan
Liu, Zheng
Parkin, Stuart S. P.
Deb, Pritam
Gao, Weibo
INFOMAT, 2024, 6 (06)
[34] Mechanical reliability of monolayer MoS2 and WSe2
Cui, Teng
Mukherjee, Sankha
Onodera, Momoko
Wang, Guorui
Kumral, Boran
Islam, Akibul
Shayegannia, Moein
Krishnan, Gopi
Barri, Nima
Serles, Peter
Zhang, Xiang
Sassi, Lucas M.
Tam, Jason
Bassim, Nabil
Kherani, Nazir P.
Ajayan, Pulickel M.
Machida, Tomoki
Singh, Chandra Veer
Sun, Yu
Filleter, Tobin
MATTER, 2022, 5 (09) : 2975 - 2989
[35] Moire-engineered light-matter interactions in MoS2/WSe2 heterobilayers at room temperature
Lin, Qiaoling
Fang, Hanlin
Kalaboukhov, Alexei
Liu, Yuanda
Zhang, Yi
Fischer, Moritz
Li, Juntao
Hagel, Joakim
Brem, Samuel
Malic, Ermin
Stenger, Nicolas
Sun, Zhipei
Wubs, Martijn
Xiao, Sanshui
NATURE COMMUNICATIONS, 2024, 15 (01)
[36] ELECTRONIC AND OPTIC PROPERTIES OF TRANSITION METAL DICHALCOGENIDES (MoS2, WSe2) AND GRAPHENE HETEROSTRUCTURES
Baranava, Maryia
Hvazdouski, Dzmitryi
Stempitsky, Viktor
Vauchok, Sviatlana
Najbuk, Miroslav
MATERIALS PHYSICS AND MECHANICS, 2018, 39 (01): : 8 - 14
[37] Gate-tunable self-driven photodetector based on asymmetric monolayer WSe2 channel
Liu, Fan
Yan, Yuting
Miao, Dongpeng
Xu, Jinpeng
Shi, Jian
Gan, Xuetao
Cheng, Yingchun
Luo, Xiaoguang
APPLIED SURFACE SCIENCE, 2023, 616
[38] Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures
Yoon, Yoseob
Zhang, Zuocheng
Qi, Ruishi
Joe, Andrew Y.
Sailus, Renee
Watanabe, Kenji
Taniguchi, Takashi
Tongay, Sefaattin
Wang, Feng
NANO LETTERS, 2022, 22 (24) : 10140 - 10146
[39] Defect-engineered room temperature negative differential resistance in monolayer MoS2 transistors
Chang, Wen-Hao
Lu, Chun-, I
Yang, Tilo H.
Yang, Shu-Ting
Simbulan, Kristan Bryan
Lin, Chih-Pin
Hsieh, Shang-Hsien
Chen, Jyun-Hong
Li, Kai-Shin
Chen, Chia-Hao
Hou, Tuo-Hung
Lu, Ting-Hua
Lan, Yann-Wen
NANOSCALE HORIZONS, 2022, 7 (12) : 1533 - 1539
[40] Ohmic-contacted WSe2/MoS2 heterostructures for broadband photodetector with fast response
Mao, Run
Liu, Ze
Zhang, Yafei
Ye, Jinghua
Guo, Junxiong
APPLIED PHYSICS EXPRESS, 2023, 16 (03)

← 1 2 3 4 5 →