Room Temperature Gate-tunable Negative Differential Resistance in MoS2/hBN/WSe2 Heterostructures

被引：0
|
作者：
Movva, Hema C. P. [1 ]
Kang, Sangwoo [1 ]
Rai, Amritesh [1 ]
Kim, Kyounghwan [1 ]
Fallahazad, Babak [1 ]
Taniguchi, Takashi [2 ]
Watanabe, Kenji [2 ]
Tutuc, Emanuel [1 ]
Banerjee, Sanjay K. [1 ]
机构：
[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 305044, Japan
来源：
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2016年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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