Development of polychromatic ultraviolet light-emitting diodes based on three-dimensional AlGaN quantum wells

被引：5
|
作者：
Kataoka, Ken [1 ,2 ]
Funato, Mitsuru [1 ]
Kawakami, Yoichi [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] USHIO Inc, Res & Dev Div, Himeji, Hyogo 6710224, Japan
来源：
APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 12期
关键词：
VAPOR-PHASE EPITAXY; SCANNING-TUNNELING-MICROSCOPY; SURFACE-DIFFUSION; SELECTIVE GROWTH; GAAS; ALAS; GAN;
D O I：
10.7567/APEX.10.121001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present polychromatic ultraviolet (UV) spectra from electrically driven light-emitting diodes (LEDs) based on three-dimensional (3D) AlGaN quantum wells (QWs). The LED structure is fabricated on AlN composed of (0001) facets, {1 (1) over bar 01} facets, and vicinal (0001) facets with bunched steps. Although subsequent n-AlGaN growth tends to eliminate step bunching, appropriate design of the growth procedures preserves the 3D structure of AlN even in the LED structure. Because the QWs on the (0001) facets and bunched steps emit different colors, the fabricated LED exhibits polychromatic deep UV emission. (C) 2017 The Japan Society of Applied Physics
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页数：4
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