BARIUM TITANATE THIN FILMS FOR NOVEL MEMORY APPLICATIONS

被引：0
|
作者：
Stoica, Laura [1 ]
Bygrave, Faye [1 ]
Bell, Andrew J. [1 ]
机构：
[1] Univ Leeds, Inst Mat Res, Leeds LS2 9JT, W Yorkshire, England
来源：
UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN-SERIES A-APPLIED MATHEMATICS AND PHYSICS | 2013年 / 75卷 / 03期
关键词：
barium titanate; thin films; oxide heterostructures; PTCR; ELECTRICAL-PROPERTIES;
D O I：
暂无
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
Within this work, BaNbxTi1-xO3/BaTiO3, with x=0.01 and 0.02 thin films have been epitaxially deposited by Pulsed Laser Deposition (PLD) on SrRuO3/SrTiO3, where SrRuO3 represents the bottom electrode deposited on single crystal substrate SrTiO3. At the interface, the films are expected to show the Positive Temperature Coefficient Resistor (PTCR) effect, which is a possible novel mechanism for memory applications. The phase, structure and lattice parameters have been investigated by X-ray Diffraction (XRD). Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) have been used to analyse the thickness and topography, whilst Piezoresponse Force Microscopy (PFM) has been used to visualise the ferroelectric domains.
引用
收藏
页码：147 / 158
页数：12
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