Surface x-ray diffraction analysis of the MgO/Fe(001) interface: Evidence for an FeO layer

被引：93

作者：

Meyerheim, HL

Popescu, R

Jedrecy, N

Vedpathak, M

Sauvage-Simkin, M

Pinchaux, R

Heinrich, B

Kirschner, J

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle An Der Saale, Germany

[2] Ctr Univ Paris Sud, CEA, CNRS, LURE, F-92405 Orsay, France

[3] CNRS, Lab Mineral Cristallog, F-75252 Paris 05, France

[4] Univ Paris 06, F-75252 Paris 05, France

[5] Univ Paris 07, F-75252 Paris 05, France

[6] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.65.144433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using surface x-ray diffraction we have investigated the geometric structure of the interface between thermally grown MgO layers and Fe(001). The MgO/Fe(001) interface is part of the Fe/MgO/Fe junction, which has become a prototype system in the study of the tunneling-magnetoresistance (TMR) effect. For all samples studied in the MgO coverage range between about 0.35 and 4.6 ML we find clear evidence for the presence of a substoichiometric FeO layer between the bulk Fe crystal and the MgO adlayers. The partial oxidation of the Fe(001) surface takes place during deposition of the first MgO monolayer and approaches a concentration limit, where about 60% of the Fe(001) hollow sites are occupied by O ions. The formation of a bulklike sixfold-coordinated Mg coordination at the MgO/O/Fe(001) interface might be accounted for stabilizing the interface structure, in which several Fe-O distances are strained by up to (10% with respect to their bulk analog. The presence of the strained interfacial FeO layer is likely to have considerable consequences on the magnitude of the TMR effect.

引用

页码：1 / 7

页数：7

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