Structural stability, electronic and thermodynamic properties of VOPO4 polymorphs from DFT plus U calculations

被引:11
|
作者
Sun, Wei [1 ]
Du, Jincheng [1 ]
机构
[1] Univ North Texas, Dept Mat Sci & Engn, Denton, TX 76203 USA
关键词
DFT plus U; VOPO4; Polymorphs; Electronic structure; Thermodynamic stability; DENSITY-FUNCTIONAL THEORY; CRYSTAL-STRUCTURE; OXYGEN VACANCIES; AB-INITIO; METAL-OXIDES; TRANSITION; V2O5; REDUCTION; OXIDATION; CATALYST;
D O I
10.1016/j.commatsci.2016.09.046
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
VOPO4 compounds are rich in polymorphs and have important applications in catalysis and as electronic functional materials. Tetragonal alpha 1-, monoclinic alpha 1, alpha 2, and beta polymorphs of VOPO4 have been investigated by using first principles calculations within density functional theory (DFT) improved by on-site Coulomb interactions (DFT+U) to better understand their thermodynamic and electronic properties. Structural and electronic properties, as well as relative stabilities for the four polymorphs, were calculated using DFT+U with both GGA and LDA exchange and correlation functionals. The effect of Hubbard U value was evaluated systematically and it is found that, although the relative stability of some polymorphs is not sensitive to the choice of U values, the relative stabilities between monoclinic alpha 1 and a2 phases varied significantly with the choice of U values. The electronic density of states (EDOS) also changed with U values; the band gap first increased and then, when higher than 6, extra states were observed in the conduction band in some of the polymorphs, and the result was a band gap decrease. Clearly, an optimal U value in the range of 6-6.8 is desired for DFT+U calculations of VOPO4 polymorphs. Investigating the effect of change of U value on thermodynamic stability and electronic band gap behaviors can thus be a criterion to decide optimal U values for further calculations such as surface adsorption and surface reactions of these compounds. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:326 / 335
页数:10
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