Synthesis of vertically electric-field-aligned In2O3 nanowires

被引：5
|
作者：
Li, SQ
Liang, YX
Guo, TL [1 ]
Lin, ZX
Wang, TH
机构：
[1] Fuzhou Univ, Dept Elect Sci & Appl Phys, Fujian 350002, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
来源：
MATERIALS LETTERS | 2006年 / 60卷 / 12期
基金：
中国国家自然科学基金;
关键词：
electric-field-aligned growth; low temperatures; In2O3; nanowires;
D O I：
10.1016/j.matlet.2005.11.094
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electric-field-aligned vertical growth of the In2O3 nanowires is realized on InAs substrates at low temperatures in a plasma environment. The experimental results show that the In2O3 nanowires are single crystal and have small diameters about 10 nm. It is revealed that the growth follows a catalyst-assisted growth mechanism. The dipoles in the In2O3 nanowires, induced by the electric field of plasma sheath, are responsible for the alignment of the In2O3 nanowires. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：1492 / 1495
页数：4
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