Evaluation of single-event upset tolerance on recent commercial memory ICs

被引：0
|
作者：
Nemoto, N
Matsuzaki, K
Aoki, J
Akutsu, T
Matsuda, S
Naito, I
Itoh, H
Nashiyama, I
机构：
来源：
EECC'97 - PROCEEDINGS OF THE THIRD ESA ELECTRONIC COMPONENTS CONFERENCE | 1997年 / 395卷
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D O I：
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中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
Single-event upset (SEU) tolerance for commercial 1Mbit SRAMs, 4Mbit SRAMs, 16Mbit DRAMs and 64Mbit DRAMs was evaluated by irradiation tests using high-energy heavy ions with an LET range between 4.0 and 60.6MeV/(mg/cm(2)). The threshold LET and the saturated cross-section were determined for each device from the LET dependence of the SEU cross-section. We show these test results and describe the SEU tolerance of highly integrated memory devices in connection with their structures and fabrication processes. The SEU rates in actual space were also calculated for these devices.
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页码：461 / 466
页数：6
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