Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO4 thin-film transistors

被引：2

作者：

Wang, Wei-Hsiang ^{[1
]}

Lyu, Syue-Ru ^{[1
]}

Heredia, Elica ^{[1
]}

Liu, Shu-Hao ^{[1
]}

Jiang, Pei-Hsun ^{[1
]}

Liao, Po-Yung ^{[2
]}

Chang, Ting-Chang ^{[2
]}

机构：

[1] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 05期

关键词：

OXIDE SEMICONDUCTORS; HIGH-MOBILITY; TRANSPARENT; MAGNETORESISTANCE; TRANSPORT; METAL;

D O I：

10.7567/APEX.10.051103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the gate-voltage dependence of the magnetoconductivity of several amorphous InGaZnO4 (a-IGZO) thin-film transistors (TFTs). The magnetoconductivity exhibits gate-voltage-controlled competitions between weak localization (WL) and weak antilocalization (WAL), and the respective weights of WL and WAL contributions demonstrate an intriguing universal dependence on the channel conductivity regardless of the difference in the electrical characteristics of the a-IGZO TFTs. Our findings help build a theoretical interpretation of the competing WL and WAL observed in the electron systems in a-IGZO TFTs. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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