Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser

被引：2
|
作者：
Xu Ming [1 ]
Shi Wei [1 ,2 ]
Jiang Zenggong [1 ]
Wang Shaoqiang [1 ]
Fu Zhanglong [1 ]
机构：
[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China
[2] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
来源：
PLASMA SCIENCE & TECHNOLOGY | 2011年 / 13卷 / 06期
基金：
中国国家自然科学基金; 美国国家科学基金会;
关键词：
GaAs; photoconductive switches; photo-activated charge domain; longevity;
D O I：
10.1088/1009-0630/13/6/07
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
Semi-insulating gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) have great potential for high voltage switching application, however, the utility is restricted by surface flashover which would result in breakdown. In this paper, a model of photo-activated charge wave was proposed based on the theory of photo-activated charge domain (PACD) in GaAs PCSS, and moderate suppression of PACD formation by loading the semiconductor surface with dielectric material was investigated theoretically and experimentally. Current as high as 3.7 kA was obtained at 28 kV, implying that this method can effectively inhibit the surface flashover and improve the service life of DC charged GaAs PCSS.
引用
收藏
页码：672 / 675
页数：4
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