Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering

被引:17
|
作者
Tardif, Samuel [1 ,2 ]
Gassenq, Alban [1 ,3 ]
Guilloy, Kevin [1 ,3 ]
Pauc, Nicolas [1 ,3 ]
Dias, Guilherme Osvaldo [1 ,4 ]
Hartmann, Jean-Michel [1 ,4 ]
Widiez, Julie [1 ,4 ]
Zabel, Thomas [5 ]
Marin, Esteban [5 ]
Sigg, Hans [5 ]
Faist, Jerome [6 ]
Chelnokov, Alexei [1 ,4 ]
Reboud, Vincent [1 ,4 ]
Calvo, Vincent [1 ,3 ]
Micha, Jean-Sebastien [1 ,2 ,7 ]
Robach, Odile [1 ,2 ]
Rieutord, Francois [1 ,2 ]
机构
[1] Univ Grenoble Alpes, F-38000 Grenoble, France
[2] CEA, INAC, MEM, 17 Rue Martyrs, F-38000 Grenoble, France
[3] CEA, INAC, PHELIQS, 17 Rue Martyrs, F-38000 Grenoble, France
[4] CEA, LETI, Minatec Campus,17 Rue Martyrs, F-38054 Grenoble, France
[5] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland
[6] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[7] CNRS, 17 Rue Martyrs, F-38000 Grenoble, France
来源
基金
瑞士国家科学基金会;
关键词
Laue micro-diffraction; rainbow-filtered micro-diffraction; strain mapping; Ge micro-devices; WHITE-BEAM; GRAIN-ORIENTATION; ELASTIC STRAIN; THIN-FILMS; MICRODIFFRACTION; GERMANIUM; SILICON; DISLOCATION; NANOMEMBRANES; SPECTROSCOPY;
D O I
10.1107/S1600576716010347
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Laue micro-diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micrometre scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. The measurements were performed in a series of micro-devices under either uniaxial or biaxial stress and an excellent agreement with numerical simulations was found. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices.
引用
收藏
页码:1402 / 1411
页数:10
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