InGaN/GaN nanostructure light emitting diodes for efficient solid state lighting

被引：0
|
作者：
Dapkus, P. Daniel [1 ,2 ]
Yeh, Ting Wei [2 ]
Lin, Yenting [2 ]
机构：
[1] Univ So Calif, Ming Hsieh Dept Elect Engn, Los Angeles, CA 90089 USA
[2] Univ So Calif, Mork Family Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2013年 / 246卷
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D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
84-PHYS
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页数：1
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