Study of polycrystalline diamond layers deposited from gas phase

Crystal lite size in polycrystalline diamond layers with a grain size exceeding 3 mum are determined by the X-ray topography method with the use of a divergent beam from a point source. For layers with thicknesses in the range 80-700 mum deposited in SHF plasma and 1-40 mum obtained by the method of a hot filament, the size distribution of crystallites is obtained. Asterism of some spots on X-ray diffraction patterns from the diamond layers with thicknesses exceeding 100 mum showed plastic deformation of individual crystallites. The parameters of deep levels in the band gap of undoped high-resistance diamond layers and the acceptor-type defects with an activation energy higher than I eV are determined by the method of charge relaxation spectroscopy. (C) 2002 MAIK "Nauka/Interperiodica".