Low-energy electron-beam lithography of hydrogen silsesquioxane

被引：18

作者：

Yang, Haifang

Jin, Aizi

Luo, Qiang

Gu, Changzhi

Cui, Zheng ^{[1
]}

Chen, Yifang

机构：

[1] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England

[2] Chinese Acad Sci, Inst Phys, Lab Microfabricat, Beijing 100080, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 4-9期

基金：

中国国家自然科学基金;

关键词：

electron-beam lithography; HSQ resist;

D O I：

10.1016/j.mee.2006.01.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-energy electron-beam lithography using hydrogen silsesquioxane (HSQ) as a negative electron resist has been investigated in the energy range between 2 and 20 keV. It is found that the required electron dose is drastically reduced at low electron energies and the density of the pattern strongly depends on the concentration of the developer and exposure energy at low keV region. With the tetramethyl ammonium hydroxide (TMAH) developer at concentration of 2.5%, we achieved 12 nm lines of 50 nm period grating with 50 nm thickness of HSQ at 10 keV. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：788 / 791

页数：4

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