Voltage-tunable dual-band InAs quantum-dot infrared photodetectors based on InAs quantum dots with different capping layers

被引：13
|
作者：
Meisner, Mark J. [1 ]
Vaillancourt, Jarrod [2 ]
Lu, Xuejun [2 ]
机构：
[1] Raytheon Missile Syst, Tucson, AZ 85734 USA
[2] Univ Massachusetts, Dept Elect & Comp Engn, Lowell, MA 01854 USA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 09期
关键词：
D O I：
10.1088/0268-1242/23/9/095016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A voltage-tunable, dual-band, InAs quantum-dot infrared photodetector (QDIP) is reported. The QDIP consists of InAs quantum dot layers with GaAs and In0.20Ga0.80As capping layers for extended middle infrared (EMIR, 6-8 mu m) and long-wave infrared (LWIR, 8-12 mu m) detection, respectively. Voltage-tunable single-and dual- band operations were obtained with good photoresponsivity and photodetectivity selectivity. Since the detection band of the QD FPA can be individually tuned by engineering the capping layers of the InAs QDs, this design approach offers great flexibility in detection for a given spectral region.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Voltage-tunable dual-band quantum dot infrared photodetectors for temperature sensing
    Ling, Hong-Shi
    Wang, Shiang-Yu
    Hsu, Wei-Cheng
    Lee, Chien-Ping
    OPTICS EXPRESS, 2012, 20 (10): : 10484 - 10489
  • [2] Voltage-tunable two-color quantum-dot infrared photodetectors
    Lin, Shih-Yen
    Lin, Wei-Hsun
    Tseng, Chi-Che
    Chao, Kuang-Ping
    Mai, Shu-Cheng
    APPLIED PHYSICS LETTERS, 2009, 95 (12)
  • [3] Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
    Tseng, Chi-Che
    Chung, Tung-Hsun
    Mai, Shu-Cheng
    Chao, Kuang-Ping
    Lin, Wei-Hsun
    Lin, Shih-Yen
    Wu, Meng-Chyi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03):
  • [4] A voltage-tunable multispectral 320 x 256 InAs/GaAs quantum-dot infrared focal plane array
    Vaillancourt, Jarrod
    Vasinajindakaw, Puminun
    Lu, Xuejun
    Stintz, Andreas
    Bundas, Jason
    Cook, Robert
    Burrows, Douglas
    Patnaude, Kelly
    Dennis, Richard
    Reisinger, Axel
    Sundaram, Mani
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (04)
  • [5] Noise and photoconductive gain in InAs quantum-dot infrared photodetectors
    Ye, ZM
    Campbell, JC
    Chen, ZH
    Kim, ET
    Madhukar, A
    APPLIED PHYSICS LETTERS, 2003, 83 (06) : 1234 - 1236
  • [6] Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors
    Lin, SY
    Tsai, YJ
    Lee, SC
    APPLIED PHYSICS LETTERS, 2003, 83 (04) : 752 - 754
  • [7] InAs quantum dots infrared photodetectors
    Ye, ZM
    Campbell, JC
    Chen, ZH
    Kim, ET
    Madhukar, A
    2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS, 2004, : 185 - 192
  • [8] Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors
    Kim, Jin Soak
    Kim, Eun Kyu
    Choi, Won Jun
    Song, Jin Dong
    Lee, Jung Il
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6B): : 5575 - 5577
  • [9] Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors
    Kim, Jin Soak
    Kim, Eun Kyu
    Choi, Won Jun
    Song, Jin Dong
    Lee, Jung Il
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (6 B): : 5575 - 5577
  • [10] A Photovoltaic InAs Quantum-Dot Infrared Photodetector
    Tang Guang-Hua
    Xu Bo
    Jiang Li-Wen
    Kong Jin-Xia
    Kong Ning
    Liang De-Chun
    Liang Ping
    Ye Xiao-Ling
    Jin Peng
    Liu Feng-Qi
    Chen Yong-Hai
    Wang Zhan-Guo
    CHINESE PHYSICS LETTERS, 2010, 27 (04)
12345