Non-Markovian damping of Rabi oscillations in semiconductor quantum dots

被引：9

作者：

Mogilevtsev, D. ^{[1
]}

Nisovtsev, A. P. ^{[1
]}

Kilin, S. ^{[1
]}

Cavalcanti, S. B. ^{[2
,3
]}

Brandi, H. S. ^{[3
,4
]}

Oliveira, L. E. ^{[3
,5
]}

机构：

[1] NASB, Inst Phys, Minsk 220072, BELARUS

[2] Univ Fed Alagoas, Inst Fis, BR-57072970 Maceio, AL, Brazil

[3] Inmetro, BR-25250020 Duque De Caxias, RJ, Brazil

[4] Univ Fed Rio de Janeiro, Inst Fis, BR-21945970 Rio de Janeiro, Brazil

[5] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 05期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1088/0953-8984/21/5/055801

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A systematic investigation is performed on the damping of Rabi oscillations induced by an external electromagnetic field interacting with a two-level semiconductor system. We have considered a coherently driven two-level system coupled to a dephasing reservoir and shown that, to explain the dependence of the dephasing rate on the driving intensity, it is essential to consider the non-Markovian character of the reservoir. Moreover, we have demonstrated that intensity-dependent damping may be induced by various dephasing mechanisms due to stationary as well as non-stationary effects caused by coupling with the environment. Finally, present results are able to explain a variety of experimental measurements available in the literature.

引用

页数：9

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