Non-Markovian damping of Rabi oscillations in semiconductor quantum dots

被引：8
|
作者：
Mogilevtsev, D. [1 ]
Nisovtsev, A. P. [1 ]
Kilin, S. [1 ]
Cavalcanti, S. B. [2 ,3 ]
Brandi, H. S. [3 ,4 ]
Oliveira, L. E. [3 ,5 ]
机构：
[1] NASB, Inst Phys, Minsk 220072, BELARUS
[2] Univ Fed Alagoas, Inst Fis, BR-57072970 Maceio, AL, Brazil
[3] Inmetro, BR-25250020 Duque De Caxias, RJ, Brazil
[4] Univ Fed Rio de Janeiro, Inst Fis, BR-21945970 Rio de Janeiro, Brazil
[5] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 05期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1088/0953-8984/21/5/055801
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A systematic investigation is performed on the damping of Rabi oscillations induced by an external electromagnetic field interacting with a two-level semiconductor system. We have considered a coherently driven two-level system coupled to a dephasing reservoir and shown that, to explain the dependence of the dephasing rate on the driving intensity, it is essential to consider the non-Markovian character of the reservoir. Moreover, we have demonstrated that intensity-dependent damping may be induced by various dephasing mechanisms due to stationary as well as non-stationary effects caused by coupling with the environment. Finally, present results are able to explain a variety of experimental measurements available in the literature.
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页数：9
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