Ion beam synthesis of buried CoSi2-structures

被引：6

作者：

Vogel, T ^{[1
]}

Meijer, J ^{[1
]}

Stephan, A ^{[1
]}

Weidenmüller, U ^{[1
]}

Dagkaldiran, Ü ^{[1
]}

Kubsky, S ^{[1
]}

Baving, P ^{[1
]}

Becker, HW ^{[1
]}

Röcken, H ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Inst Phys Ionenstrahlen, D-44780 Bochum, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 188卷

关键词：

ion beam synthesis; ion implantation; silicide formation; ion projection;

D O I：

10.1016/S0168-583X(01)01070-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion beam synthesis of buried CoSi2, microstructures was performed by high energy ion projection (HEIP) implantation of cobalt into silicon. Ion beam synthesis (mesotaxy) means stoichiometrically high-fluence ion implantation into a heated sample and subsequent annealing of the specimen. The use of the ion projection technique permits an in situ contact mask-free structuring with a sub-micron lateral resolution. The HEIP set-up consists of a superconducting solenoid lens. which projects the structures of a stencil mask onto the target and is driven by a 4 MV tandem accelerator, Because of the high demagnification of the structures the ion current density at the target is increased by two orders of magnitude for small structures. The analysis of the produced structures by optical and electron microscopy. Rutherford backscattering spectroscopy and electrical characterisation shows the good applicability of the Bochum HEIP for IBS. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：174 / 178

页数：5

共 50 条

[1] Synthesis of CoSi2-structures using ion microprobes
Meijer, J
Weidenmüller, U
Baving, P
Röcken, H
Stephan, A
Bukow, HH
Rolfs, C
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 : 898 - 903
[2] ION-SCATTERING INVESTIGATIONS OF BURIED COSI2 LAYERS PRODUCED BY ION-BEAM SYNTHESIS
JEBASINSKI, R
MANTL, S
DIEKER, C
JAGER, W
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4): : 99 - 102
[3] FABRICATION OF THIN BURIED COSI2 LAYERS IN SI(100) BY ION-BEAM SYNTHESIS
JEBASINSKI, R
MANTL, S
DIEKER, C
THIN SOLID FILMS, 1993, 223 (02) : 298 - 302
[4] FORMATION OF BURIED COSI2 LAYERS WITH ION-BEAM SYNTHESIS AT LOW IMPLANTATION ENERGIES
JEBASINSKI, R
MANTL, S
VESCAN, L
DIEKER, C
APPLIED SURFACE SCIENCE, 1991, 53 : 264 - 272
[5] PHOSPHORUS REDISTRIBUTION DURING THE FORMATION OF BURIED COSI2 LAYERS BY ION-BEAM SYNTHESIS
SCHUPPEN, A
JEBASINSKI, R
MANTL, S
MARSO, M
LUTH, H
BREUER, U
HOLZBRECHER, H
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 84 (02): : 143 - 147
[6] ION-BEAM SYNTHESIS OF HETEROEPITAXIAL SI/COSI2/SI STRUCTURES
VANOMMEN, AH
BULLELIEUWMA, CWT
OTTENHEIM, JJM
THEUNISSEN, AML
JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) : 1767 - 1778
[7] BURIED SINGLE-CRYSTAL COSI2 LAYERS IN SIGE ALLOYS MADE BY ION-BEAM SYNTHESIS
JEBASINSKI, R
MANTL, S
DIEKER, C
CRECELIUS, G
DEDERICHS, H
VESCAN, L
APPLIED PHYSICS LETTERS, 1992, 61 (20) : 2409 - 2411
[8] Formation of buried CoSi2 by ion implantation
Kohlhof, K., 1600, (38): : 1 - 4
[9] COSi2 nanostructures by writing FIB ion beam synthesis
Akhmadaliev, C
Bischoff, L
Schmidt, B
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 818 - 821
[10] Ion beam synthesis of CoSi2 - Microstructures by means of a high current focused ion beam
Bischoff, L
Teichert, J
Hesse, E
Panknin, D
Skorupa, W
ION BEAM MODIFICATION OF MATERIALS, 1996, : 933 - 936

← 1 2 3 4 5 →