Porous silicon carbide: Material properties, formation mechanism and techniques of material modification.

被引：0

作者：

Konstantinov, AO ^{[1
]}

Harris, CI ^{[1
]}

Henry, A ^{[1
]}

Janzen, E ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of preparation conditions and subsequent material treatment on structure and properties of porous silicon carbide are investigated. We demonstrate that the material properties are dominated by Fermi-level pinning due to surface states and propose techniques for controlling them. Some promising applications of porous SiC are discussed.

引用

页码：1079 / 1082

页数：4

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