Porous silicon carbide: Material properties, formation mechanism and techniques of material modification.

被引：0
|
作者：
Konstantinov, AO [1 ]
Harris, CI [1 ]
Henry, A [1 ]
Janzen, E [1 ]
机构：
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of preparation conditions and subsequent material treatment on structure and properties of porous silicon carbide are investigated. We demonstrate that the material properties are dominated by Fermi-level pinning due to surface states and propose techniques for controlling them. Some promising applications of porous SiC are discussed.
引用
收藏
页码：1079 / 1082
页数：4
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