A low power CMOS voltage reference based on body effect

被引：3

作者：

Zeng, Yanhan ^{[1
]}

Luo, Yunling ^{[1
]}

Zhang, Jun ^{[1
]}

Gong, Zhuqian ^{[1
]}

Tan, Hong-Zhou ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Informat Sci & Technol, Guangzhou 510006, Guangdong, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 08期

关键词：

CMOS analog circuit; temperature compensation; voltage reference; low power; body effect technique;

D O I：

10.1587/elex.10.20130154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A voltage reference of low supply voltage and low power consumption has been proposed and simulated using 0.18 mu m process in this paper. Utilizing the body effect, temperature compensation is achieved without using any other special devices such as thick gate oxides MOSFETs with higher threshold. The simulation results show that the line sensitive is 0.73 ppm/V in a supply voltage range of 0.6V to 2V and the temperature coefficient is typically 23.7 ppm/degrees C in a temperature range of -20 degrees C to 80 degrees C with the power consumption of 30.5 nW at room temperature. The power supply rejection ratio is -40 dB at 10 Hz and -32 dB at 100 Hz, respectively.

引用

页数：6

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