Magnetic-field-driven metal-insulator transition in magnetic semiconductor (Ga,Mn)As

被引：0

作者：

Hayashi, T ^{[1
]}

Hashimoto, Y ^{[1
]}

Yoshida, S ^{[1
]}

Katsumoto, S ^{[1
]}

Iye, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-insulator transition (MIT) in a diluted magnetic semiconductor (Ga,Mn)As is studied in detail. The material parameters were finely tuned by repeated low temperature annealing and finally the MIT was driven by external magnetic. field. The temperature dependence in the vicinity of the transition was T-1/4 and the two-parameter scaling scheme was successfully applied to obtain the exponent 1.6 +/- 0.2.

引用

页码：254 / 255

页数：2

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