Low Power and High Sensitivity MOSFET-Based Pressure Sensor

被引：8

作者：

Zhang Zhao-Hua ^{[1
]}

Ren Tian-Ling ^{[1
]}

Zhang Yan-Hong ^{[1
]}

Han Rui-Rui ^{[1
]}

Liu Li-Tian ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 08期

关键词：

D O I：

10.1088/0256-307X/29/8/088501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the metal-oxide-semiconductor field effect transistor (MOSFET) stress sensitive phenomenon, a low power MOSFET pressure sensor is proposed. Compared with the traditional piezoresistive pressure sensor, the present pressure sensor displays high performances on sensitivity and power consumption. The sensitivity of the MOSFET sensor is raised by 87%, meanwhile the power consumption is decreased by 20%.

引用

页数：3

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