First-Principle Electronic Properties of Monoclinic (AlxInyGa1-x-y)2O3 Alloys

被引：0

作者：

Liu, Xiaoli ^{[1
]}

Tan, Chee-Keong ^{[1
]}

机构：

[1] Clarkson Univ, Dept Elect & Comp Engn, Potsdam, NY 13699 USA

来源：

2019 19TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2019) | 2019年

关键词：

SEMICONDUCTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

First-Principle DFT calculations are carried out to investigate the electronic properties of beta-(AlxInyGa1-x-y)(2)O-3 alloys with x ranging from 0 similar to 12.5% and y ranging from 0 similar to 18.75%. The electronic properties of monoclinic gallium oxide alloy with added aluminium and indium atoms are explored. The incorporation of both aluminium and indium results in the reduction of energy bandgap of beta-(AlxInyGa1-x-y)(2)O-3 alloys. Additionally, indium of higher content than aluminium in the quaternary alloy promotes the indirect bandgap transferring to direct bandgap. This work provides new findings on the flexible band property modification of monoclinic gallium oxide-based material and indicates their potential in deep ultraviolet photodetector.

引用

页码：119 / 120

页数：2

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