Interband Cascade Laser on Silicon

被引：0
|
作者：
Spott, A. [1 ]
Stanton, E. J. [1 ]
Torres, A. [1 ]
Davenport, M. L. [1 ]
Canedy, C. L. [2 ]
Vurgaftman, I. [2 ]
Kim, M. [3 ]
Kim, C. S. [2 ]
Merritt, C. D. [2 ]
Bewley, W. W. [2 ]
Meyer, J. R. [2 ]
Bowers, J. E. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] US Naval Res Lab, Washington, DC 20375 USA
[3] Sotera Def Solut Inc, Columbia, MD USA
来源：
2017 IEEE PHOTONICS CONFERENCE (IPC) PT II | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the first interband cascade lasers heterogeneously integrated with silicon waveguides. The 3.6 mu m wavelength lasers operate in pulsed mode at room temperature, with threshold currents as low as 394 mA.
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页数：2
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