Interband Cascade Laser on Silicon

被引：0

作者：

Spott, A. ^{[1
]}

Stanton, E. J. ^{[1
]}

Torres, A. ^{[1
]}

Davenport, M. L. ^{[1
]}

Canedy, C. L. ^{[2
]}

Vurgaftman, I. ^{[2
]}

Kim, M. ^{[3
]}

Kim, C. S. ^{[2
]}

Merritt, C. D. ^{[2
]}

Bewley, W. W. ^{[2
]}

Meyer, J. R. ^{[2
]}

Bowers, J. E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] US Naval Res Lab, Washington, DC 20375 USA

[3] Sotera Def Solut Inc, Columbia, MD USA

来源：

2017 IEEE PHOTONICS CONFERENCE (IPC) PT II | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the first interband cascade lasers heterogeneously integrated with silicon waveguides. The 3.6 mu m wavelength lasers operate in pulsed mode at room temperature, with threshold currents as low as 394 mA.

引用

页数：2

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