Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

被引：40
|
作者：
Younis, Adnan [1 ]
Chu, Dewei [1 ]
Li, Sean [1 ]
机构：
[1] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
来源：
NANOSCALE RESEARCH LETTERS | 2013年 / 8卷
基金：
澳大利亚研究理事会;
关键词：
Electrodeposition; Nanostructure; Resistive switching; OXIDE-FILMS; MEMORY; RESISTANCE;
D O I：
10.1186/1556-276X-8-154
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ti-doped ZnO (ZnO/Ti) thin films were grown on indium tin oxide substrates by a facile electrodeposition route. The morphology, crystal structure and resistive switching properties were examined, respectively. The morphology reveals that grains are composed of small crystals. The (002) preferential growth along c-axis of ZnO/Ti could be observed from structural analysis. The XPS study shows the presence of oxygen vacancies in the prepared films. Typical bipolar and reversible resistance switching effects were observed. High R (OFF)/R (ON) ratios (approximately 14) and low operation voltages within 100 switching cycles are obtained. The filament theory and the interface effect are suggested to be responsible for the resistive switching phenomenon.
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页码：1 / 6
页数：6
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