Preparation of Ti-doped ZnO transparent conductive thin films by PLD method

被引：0
|
作者：
Lee, HW
Choi, BG
Shim, KB
Oh, YJ [1 ]
机构：
[1] KIST, Thin Film Mat Res Ctr, Seoul 136791, South Korea
[2] Hanyang Univ, CPRC, Dept Ceram Engn, Seoul 133791, South Korea
来源：
JOURNAL OF CERAMIC PROCESSING RESEARCH | 2005年 / 6卷 / 01期
关键词：
pulsed laser deposition (PLD); ZnO; transparent conducing oxide (TCO);
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ti-doped ZnO thin films were prepared on a soda-lime glass substrate without any post heat treatment by a pulsed laser deposition (PLD) method. Processing parameters such as deposition substrate temperature, the amount of Ti-doping and oxygen flow rate were investigated. It was found that the Ti-doped ZnO thin films exhibited a strongly preferred orientation along a C-axis (002) plane and their structural, electrical and optical properties depended strongly on these parameters. Transparent conducting ZnO oxide thin films with 1 mol% Ti content formed under the conditions of a substrate temperature of 100 degrees C in an oxygen flow rate of 10 sccm showed an electrical resistivity of 3.3 x 10(-2) ohm cm, a mean optical transmittance of 92.3% with a thickness of 480 nm.
引用
收藏
页码：52 / 56
页数：5
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