Half-and-Half Compare Content Addressable Memory with Charge-Sharing based Selective Match-Line Precharge Scheme

被引:0
|
作者
Choi, Woong [1 ]
Kim, Hoonki [2 ]
Park, Changnam [2 ]
Song, Taejoong [2 ]
Park, Jongsun [1 ]
机构
[1] Korea Univ, Seoul, South Korea
[2] Samsung Elect, Hwasung, South Korea
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present a half-and-half compare contents addressable memory (HHC-CAM) to reduce the dynamic power consumption as well as white space between the cell array and peripheral. In the proposed HHC-CAM, by splitting the match-line (ML), almost 99% of entries are filtered out in first half-side comparison. Thanks to the reduced ML switching capacitance, 42% lower energy delay product (EDP) is achieved compared to the conventional selective precharge approach. The proposed 16KB, 10T-NOR CAM macro, has been fabricated in a 14nm FinFET technology, and the chip measurement results show the energy consumption of 0.38fJ/search/bit (560ps search delay), which is the best EDP reported in literature.
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页码:17 / 18
页数:2
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