Sintering Characteristics of La/Nd doped Bi4Ti3O12 Bismuth Titanate Ceramics

被引:6
|
作者
Islam, Md. Aminul [1 ]
Gafur, M. A. [2 ]
Islam, M. Saidul [1 ]
机构
[1] Rajshahi Univ, Dept Mat Sci & Engn, Rajshahi, Bangladesh
[2] BCSIR, Dhaka, Bangladesh
关键词
Bismuth Titanate; La/Nd doping; Sintering; XRD; Dielectric properties;
D O I
10.2298/SOS1502175I
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A good understanding about the properties of La/Nd doped Bismuth Titanate (BIT) ceramics at high temperature is very important as the new materials being developed based on the BIT. Pure BIT, La doped (BLT), Nd doped (BNT) and La and Nd co-doped BIT (BLNT) powders were synthesized by solid state reaction method. Prepared powders were calcined at different temperatures and structural properties measured by XRD. For pure BIT better crystal quality was obtained at 750 degrees C and for both BLT and BNT better result obtained at 800 degrees C. Calcined powders were formed into pellets and sintered at different temperatures and its dielectric properties were characterized. Optimum sintering temperature for both BLT and BNT showed was 850 degrees C and La and Nd co-doped bismuth titanate (BLNT) revealed optimum sintering temperature of 950 degrees C. Therefore, optimum sintering temperature of bismuth titanate was increased due to La and Nd doping.
引用
收藏
页码:175 / 186
页数:12
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