Four-state non-volatile memory in a multiferroic spin filter tunnel junction

被引：17
|
作者：
Ruan, Jieji
Li, Chen
Yuan, Zhoushen
Wang, Peng
Li, Aidong
Wu, Di [1 ]
机构：
[1] Nanjing Univ, Coll Engn & Appl Sci, Dept Mat Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 25期
关键词：
GIANT ELECTRORESISTANCE; ROOM-TEMPERATURE; MAGNETORESISTANCE; POLARIZATION; FIELD;
D O I：
10.1063/1.4972786
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3. Published by AIP Publishing.
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页数：5
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