Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

被引：233

作者：

Lee, Ki-Seung ^{[1
,2
]}

Lee, Seo-Won ^{[1
]}

Min, Byoung-Chul ^{[2
]}

Lee, Kyung-Jin ^{[1
,2
,3
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] Korea Inst Sci & Technol, Spin Convergence Res Ctr, Seoul 136791, South Korea

[3] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136713, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 11期

关键词：

TUNNEL-JUNCTIONS; TRANSFER-TORQUE; VOLTAGE-DEPENDENCE; ANISOTROPY; REVERSAL;

D O I：

10.1063/1.4798288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that in the high damping regime, the threshold switching current is independent of the damping constant and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. Based on the expression, we find that magnetization switching induced by the spin Hall effect can be practically useful when it is combined with voltage-controlled anisotropy change. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798288]

引用

页数：5

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