Semi-quantitative study on the Staebler-Wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system

被引：0

作者：

Ding, Y ^{[1
]}

Liu, GH

Chen, GH

He, DY

Zhu, XH

Zhang, WL

He, B

Zhang, XK

Tian, L

Ma, ZJ

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[2] Beijing Univ Technol, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China

来源：

CHINESE PHYSICS | 2006年 / 15卷 / 04期

关键词：

hydrogenated amorphous silicon; Staebler-Wronski effect; microwave electron cyclotron resonant chemical vapour deposition; charged defects;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample.

引用

页码：813 / 817

页数：5

共 43 条

[41] Infrared absorption study of unannealed and annealed hydrogenated amorphous silicon films deposited in an asymmetric RF plasma CVD system at room temperature
Panwar, OS
Mukherjee, C
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 648 - 651
[42] Effect of annealing on the electrical, optical and structural properties of hydrogenated amorphous silicon films deposited in an asymmetric RF plasma CVD system at room temperature
Panwar, OS
Mukherjee, C
Bhattacharyya, R
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 57 (04) : 373 - 391
[43] Effect of annealing on the electrical, optical and structural properties of hydrogenated amorphous silicon films deposited in an asymmetric R.F. plasma CVD system at room temperature
Panwar, O.S.
Mukherjee, C.
Bhattacharyya, R.
Solar Energy Materials and Solar Cells, 1999, 56 (04): : 373 - 391

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