Modulation properties of optically injection-locked quantum cascade lasers

被引:27
|
作者
Wang, Cheng [1 ,2 ]
Grillot, Federic [2 ]
Kovanis, Vassilios I. [3 ]
Bodyfelt, Joshua D. [4 ]
Even, Jacky [1 ]
机构
[1] Univ Europeenne Bretagne, INSA, CNRS FOTON, F-35708 Rennes 7, France
[2] Telecom Paristech, Ecole Natl Super Telecommun, CNRS LTCI, F-75013 Paris, France
[3] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA
[4] Ohio State Univ, Electrosci Lab, Columbus, OH 43212 USA
关键词
SEMICONDUCTOR-LASERS;
D O I
10.1364/OL.38.001975
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A rate equation analysis on the modulation response of an optical injection-locked quantum cascade laser is outlined. It is found that the bifurcation diagram exhibits both bistable and unstable locked regions. In addition, the stable locked regime widens as the linewidth enhancement factor increases. It is also shown that both positive and negative optical detunings as well as strong injection strength enhance the 3 dB modulation bandwidth by as much as 30 GHz. Finally, the peak in the modulation response is significantly influenced by the optical frequency detuning. (C) 2013 Optical Society of America
引用
收藏
页码:1975 / 1977
页数:3
相关论文
共 50 条
  • [21] Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial
    Lau, Erwin K.
    Wong, Liang He
    Wu, Ming C.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 618 - 633
  • [22] The relationship between the static and dynamic properties of optically switched injection-locked bistable semiconductor lasers
    Teo, CY
    Haldar, MK
    Li, LL
    Mendis, FVC
    OPTICS COMMUNICATIONS, 1996, 128 (4-6) : 262 - 268
  • [23] Relationship between the static and dynamic properties of optically switched injection-locked bistable semiconductor lasers
    Natl Univ of Singapore, Singapore, Singapore
    Opt Commun, 4-6 (262-268):
  • [24] Intensity-noise properties of injection-locked lasers
    Harb, CC
    Ralph, TC
    Huntington, EH
    Freitag, I
    McClelland, DE
    Bachor, HA
    PHYSICAL REVIEW A, 1996, 54 (05): : 4370 - 4382
  • [25] Impacts of carrier capture and relaxation rates on the modulation response of injection-locked quantum dot lasers
    Wang, Cheng
    Grillot, Frederic
    Even, Jacky
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXI, 2013, 8619
  • [26] MODULATION PROPERTIES OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER
    LIDOYNE, O
    GALLION, PB
    ERASME, D
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) : 344 - 351
  • [27] High-speed modulation of optical injection-locked semiconductor lasers
    Wu, Ming C.
    Chang-Hasnain, Connie
    Lau, Erwin K.
    Zhao, Xiaoxue
    2008 CONFERENCE ON OPTICAL FIBER COMMUNICATION/NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, VOLS 1-8, 2008, : 1880 - 1882
  • [28] Evaluation of Performance Enhancement of Optical Multi-Level Modulation Based on Direct Modulation of Optically Injection-Locked Semiconductor Lasers
    Jeong, Hyo-Sang
    Cho, Jun-Hyung
    Sung, Hyuk-Kee
    PHOTONICS, 2021, 8 (04)
  • [29] Mechanism for Modulation Response Improvement in Mutually Injection-Locked Semiconductor Lasers
    Yang, Zhenshan
    Tauke-Pedretti, Anna
    Vawter, G. Allen
    Chow, Weng W.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (03) : 300 - 305
  • [30] 35-GHz modulation bandwidth in injection-locked semiconductor lasers
    Hwang, SK
    Liu, JM
    White, JK
    2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2003, : 710 - 711