Ultraviolet Raman spectroscopy of GaN/AlN core-shell nanowires: Core, shell, and interface modes

被引：19

作者：

Cros, A. ^{[1
]}

Mata, R. ^{[1
]}

Hestroffer, K. ^{[2
]}

Daudin, B. ^{[2
]}

机构：

[1] Univ Valencia, Inst Mat Sci, E-46071 Valencia, Spain

[2] CEA, CNRS, Grp Nanophys & Semicond, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 14期

关键词：

GAN; ALN;

D O I：

10.1063/1.4801779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The vibrational properties of GaN/AlN core-shell nanowire heterostructures with shell thicknesses ranging from 0.5 to 12 nm have been investigated by means of Raman spectroscopy with ultraviolet and visible excitation. The selection of an excitation line close to the GaN band gap allows the study of the strain state of the GaN core, while excitation at higher energies activates modes localized at the core-shell interface and the AlN shell, which are as well strain dependent. The results are compared with calculations of the vibrational modes based on the dielectric continuum model, including strain through the continuum elasticity theory. (C) 2013 AIP Publishing LLC.

引用

页数：4

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