Ultraviolet Raman spectroscopy of GaN/AlN core-shell nanowires: Core, shell, and interface modes

被引:19
|
作者
Cros, A. [1 ]
Mata, R. [1 ]
Hestroffer, K. [2 ]
Daudin, B. [2 ]
机构
[1] Univ Valencia, Inst Mat Sci, E-46071 Valencia, Spain
[2] CEA, CNRS, Grp Nanophys & Semicond, F-38054 Grenoble 9, France
关键词
GAN; ALN;
D O I
10.1063/1.4801779
中图分类号
O59 [应用物理学];
学科分类号
摘要
The vibrational properties of GaN/AlN core-shell nanowire heterostructures with shell thicknesses ranging from 0.5 to 12 nm have been investigated by means of Raman spectroscopy with ultraviolet and visible excitation. The selection of an excitation line close to the GaN band gap allows the study of the strain state of the GaN core, while excitation at higher energies activates modes localized at the core-shell interface and the AlN shell, which are as well strain dependent. The results are compared with calculations of the vibrational modes based on the dielectric continuum model, including strain through the continuum elasticity theory. (C) 2013 AIP Publishing LLC.
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页数:4
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