A geometrical model for the description of the AlN shell morphology in GaN-AlN core-shell nanowires

被引：14

作者：

Hestroffer, Karine ^{[1
]}

Daudin, Bruno

机构：

[1] Univ Grenoble 1, CNRS, Inst Neel, CEA,Grp Nanophys & Semicond, F-38054 Grenoble, France

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 24期

关键词：

GROWTH; NANOCOLUMNS;

D O I：

10.1063/1.4854495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A geometrical model based on the one formulated by Foxon et al. [J. Cryst. Growth 311, 3423 (2009)] is developed to describe the morphology of AlN shells in GaN-AlN core-shell nanowires grown by plasma-assisted molecular beam epitaxy. The shell aspect ratio is studied as a function of the atomic beam flux incidence angles and of the ratio between Al and N species. The comparison between experimental data and the developed geometrical model suggests the diffusion of about 55% of Al atoms from the side walls to the top surface. (C) 2013 AIP Publishing LLC.

引用

页数：7

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