Analysis of defects on BN nano-structures using high-resolution electron microscopy and density-functional calculations

被引:5
|
作者
Bengu, Erman [1 ]
Marks, Laurence D. [2 ]
Ovali, Rasim V. [3 ]
Gulseren, Oguz [3 ]
机构
[1] Bilkent Univ, Dept Chem, Inst Mat Sci & Nanotechnol, Ankara, Turkey
[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[3] Bilkent Univ, Dept Phys, Ankara, Turkey
关键词
Microscopy of surfaces; Interfaces and thin films; Fullerenes and related materials; Models of film growth; Total energy and cohesive energy calculations;
D O I
10.1016/j.ultramic.2008.04.097
中图分类号
TH742 [显微镜];
学科分类号
摘要
Cubic boron nitride (c-BN) nucleation takes place on hexagonal boron nitride (h-BN) layers growing perpendicular to the substrate surface during thin film synthesis. Studies focused on the nucleation of the cubic phase suggest the possibility that transient phases and/or defects on these h-BN structures have a role in sp3-bonded cubic phase nucleation. In this study, we have investigated the nature, energetics, and structure of several possible defects on BN basal planes, including point defects, 4-, and 5-fold BN rings, that may possibly match the experimentally observed transient phase fine structure. TEM image observations are used to build approximate atomic models for the proposed structures, and DFT calculations are used to relax these structures while minimizing their respective total energies. These optimized atomic geometries are then used to simulate TEM images, which are compared to the experimentally observed structures. Data from DFT calculations and analysis of simulated images from the proposed atomic structures suggest that 4-fold BN rings are more likely to exist on the transient phase possibly leading to c-BN nucleation. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1484 / 1489
页数:6
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