Characterization of ALN thin films deposited by DC reactive magnetron sputtering

被引：0

作者：

Garcia-Mendez, M. ^{[1
]}

Morales-Rodriguez, S. ^{[2
]}

Machorro, R. ^{[3
]}

De La Cruz, W. ^{[3
]}

机构：

[1] UANL, Fac Ciencias Fisicomatemat, Lab Nanociencias & Nanotecnol, Div Posgrado, San Nicolas De Los Garza 66450, NL, Mexico

[2] UANL, FCFM, Programa Posgrado Ingn Fis Ind, Div Posgrado, San Nicolas De Los Garza 66450, NL, Mexico

[3] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada 22860, Baja California, Mexico

来源：

REVISTA MEXICANA DE FISICA | 2008年 / 54卷 / 04期

关键词：

reactive sputtering; thin films; AlN;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A set of AlN thin-films was prepared by reactive magnetron sputtering at room temperature. The purpose of this work was to study the effect of oxygen impurities on the structural and optical properties of AlN films. The structural and optical properties of the resulting films were characterized using X-ray diffraction (XRD) and spectroscopic ellipsometry, respectively. Depending on the deposition conditions, films can be hexagonal (wurtzite, P6(3)m3) or cubic (zinc blende, Fm3m) in their microstructure. From the optical measurements, the ellipsometric parameters (psi,Delta) and the real refractive index as a function of energy were obtained. From the ellipsometric measurements, a model of the Lorentz single-oscillator was employed to estimate the optical band gap, E-g.

引用

页码：271 / 278

页数：8

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