Improvement in Short Circuit Current of p-i-n Solar Cell with Silicon Quantum Dot Superlattice Structure by Optimizing SiNX Thickness

被引：0

作者：

Rai, Dharmendra K. R. ^{[1
]}

Mavilla, Narasimha Rao ^{[2
]}

Panchal, Ashish K. ^{[3
]}

Solanki, Chetan S. ^{[1
]}

机构：

[1] Indian Inst Technol, Natl Ctr Photovolta Res & Educ, Dept Energy Sci & Engn, Bombay 400076, Maharashtra, India

[2] Indian Inst Technol, Natl Ctr Photovolta Res & Educ, Dept Elect Engn, Bombay 400076, Maharashtra, India

[3] SV Natl Inst Technol, Dept Elect Engn, Surat 395007, India

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

silicon; amorphous silicon; quantum dot; superlattice; p-i-n solar cell; HWCVD; quantum confinement effect; TANDEM CELLS; CONFINEMENT; NITRIDE;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Superlattice consisting of 10 alternate layers of a-Si with QDs and SiNX are incorporated as i-layer in a p-i-n solar cell using HWCVD method. Superlattice with QDs showed absorption coefficient in the range of similar to 10(5)-10(4) cm(-1). Calculated optical bandgap of the SL with QDs (similar to 1.84 eV) is higher than the SL without QDs (similar to 1.79 eV) and this is attributed to QCE. The cells with QDs showed I-SC = 1.806 mu A and V-OC = 2 5 mV. Increase in I-SC of cells is attributed to increase in tunneling current due to decrease in SiNX thickness. Low V-OC has been attributed to the thin SiNX layers, the defects and the interface states which result in recombination.

引用

页码：810 / 814

页数：5

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