Design of polarization-independent adiabatic splitters fabricated on silicon-on-insulator substrates

被引：18
|
作者：
Xing, Jiejiang [1 ]
Li, Zhiyong [1 ]
Yu, Yude [1 ]
Yu, Jinzhong [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
OPTICS EXPRESS | 2013年 / 21卷 / 22期
基金：
中国国家自然科学基金;
关键词：
WAVE-GUIDE; SWITCH;
D O I：
10.1364/OE.21.026729
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A novel design for a polarization-independent SOI-based 2 x 2 3-dB adiabatic splitter with sub-micron-scale dimensions is proposed and modeled. To achieve slow and smooth mode evolution, a structure with simultaneous tapering of velocity and coupling is used. To reduce the adiabatic region length by adjusting the gap separation, the coupling strengths of TE and TM polarizations as a function of the gap value are analyzed. For both polarizations, a high uniformity within +/- 0.2dB over a broad bandwidth from 1520 to 1650 nm is achieved with a 300-mu m-long adiabatic region. (C)2013 Optical Society of America
引用
收藏
页码：26729 / 26734
页数：6
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