Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator

被引：2
|
作者：
Geng, Minming [1 ]
Jia, Lianxi [1 ]
Zhang, Lei [1 ]
Yang, Lin [1 ]
Liu, Yuliang [1 ]
Li, Fang [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China
来源：
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | 2008年
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1109/INEC.2008.4585563
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polarization-independent laterally-coupled micro-ring resonator has been designed and demonstrated. The origin of the polarization-sensitivity of the photonic wire waveguide (PWW) was analyzed. A polarization-insensitive PWW structure was designed and a polarization-insensitive MRR based on this PWW structure was designed by finite difference time-domain method and was fabricated on an 8-inch silicon-on-insulator wafer. The offset between the resonant wavelengths of the quasi-TE mode and the quasi-TM mode is smaller than 0.15 nm. The FSR is about 17 nm, extinction ratio about 10 dB and Q about 620.
引用
收藏
页码：624 / +
页数：2
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