p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes

被引：28
|
作者：
Liu, Zhiqiang [1 ]
Ma, Jun [1 ]
Yi, Xiaoyan [1 ]
Guo, Enqing [1 ]
Wang, Liancheng [1 ]
Wang, Junxi [1 ]
Lu, Na [2 ]
Li, Jinmin [1 ]
Ferguson, Ian [3 ]
Melton, Andrew [3 ]
机构：
[1] Chinese Acad Sci, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China
[2] Univ N Carolina, Dept Engn Technol, Charlotte, NC 28223 USA
[3] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 26期
关键词：
EFFICIENCY;
D O I：
10.1063/1.4773187
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, the advantages of the p-InGaN/AlGaN electron blocking layer (EBL) for InGaN/GaN light-emitting diodes (LEDs) were studied numerically and experimentally. The LEDs with p-InGaN/AlGaN EBL exhibited better optical performance over a wide range of carrier concentration due to the enhancement of holes' injection and electrons' confinement. The values of A, B, C, and D coefficients had been iteratively obtained by fitting quantum efficiency in the modified rate equation model. The analysis indicated that the improvement in the device properties could be attributed to the relatively small band gap and p-type doping of InGaN insertion layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773187]
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Luminescence spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes
    Zolina, KG
    Kudryashov, VE
    Turkin, AN
    Yunovich, AE
    Nakamura, S
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1996, 1 (1-46): : U88 - U95
  • [42] Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers
    Zeng, Si-Ming
    Fan, Guang-Han
    Zheng, Shu-Wen
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (10) : 3253 - 3258
  • [43] Advantages of Blue InGaN Light-Emitting Diodes with a Mix of AlGaN and InGaN Quantum Barriers
    Si-Ming Zeng
    Guang-Han Fan
    Shu-Wen Zheng
    Journal of Electronic Materials, 2015, 44 : 3253 - 3258
  • [44] Enhanced Optical Power of InGaN/GaN Light-Emitting Diode by AlGaN Interlayer and Electron Blocking Layer
    Lee, Sang-Jun
    Cho, Chu-Young
    Hong, Sang-Hyun
    Han, Sang-Heon
    Yoon, Sukho
    Kim, Sung-Tae
    Park, Seong-Ju
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (22) : 1991 - 1994
  • [45] InGaN blue light-emitting diodes with optimized n-GaN layer
    Eliashevich, I
    Li, YX
    Osinsky, A
    Tran, CA
    Brown, MG
    Karlicek, RF
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS III, 1999, 3621 : 28 - 36
  • [46] Degradation mechanisms of AlGaN/InGaN/GaN blue light emitting diodes
    Osinski, M
    Barton, DL
    Zeller, J
    Chiu, PC
    Phillips, BS
    Helms, CJ
    Berg, N
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 995 - 998
  • [47] Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes
    Wang, C. K.
    Hung, K. C.
    Chiou, Y. Z.
    Jheng, J. S.
    Chang, S. P.
    Chang, S. J.
    JOURNAL OF CRYSTAL GROWTH, 2017, 468 : 562 - 566
  • [48] Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer
    卓祥景
    章俊
    李丹伟
    易翰翔
    任志伟
    童金辉
    王幸福
    陈鑫
    赵璧君
    王伟丽
    李述体
    Chinese Physics B, 2014, (06) : 612 - 616
  • [49] Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer
    Zhuo Xiang-Jing
    Zhang Jun
    Li Dan-Wei
    Yi Han-Xiang
    Ren Zhi-Wei
    Tong Jin-Hui
    Wang Xing-Fu
    Chen Xin
    Zhao Bi-Jun
    Wang Wei-Li
    Li Shu-Ti
    CHINESE PHYSICS B, 2014, 23 (06)
  • [50] Improvement of Performance in p-Side Down InGaN/GaN Light-Emitting Diodes with Graded Electron Blocking Layer
    Li, Zhiqiang
    Lestrade, Michel
    Xiao, Yegao
    Li, Zhanming Simon
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (08)
12345