μ-Si strain gauge array on flexible substrate for dynamic pressure measurement

被引:4
|
作者
Castro, Fatima Garcia [1 ]
de Sagazan, Olivier [1 ]
Coulon, Nathalie [1 ]
Corbera, Antoni Homs [2 ]
Fassini, Dario [2 ]
Cramer, Jeremy [2 ]
Le Bihan, France [1 ]
机构
[1] Univ Rennes, IETR, CNRS, UMR 6164, F-35000 Rennes, France
[2] Cherry Biotech, F-35000 Rennes, France
关键词
ICP-CVD; PECVD; Strain gauges array; TLM; mu-Si doped; Flexible electronics; Thin film pressure sensor; dynamic pressure measurement; blood pressure monitoring; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; SILICON; TEMPERATURE; TRANSISTORS; SENSOR; TFT;
D O I
10.1016/j.sna.2020.112274
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Low Temperature mu-Si layers have been deposited by Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) to produce strain gauges. These strain gauges performed on 25 mu m thick flexible Kapton Polyimide (PI) were investigated in terms of Gauge Factor but also in dynamic mode through a homemade pneumatic test bench. Best strain gauge design has been identified and subsequently used to perform a 25 sensor array which was also tested using pulses and more complex signals. A simulation of blood pressure monitoring was performed to demonstrate the value of the technology. (C) 2020 Elsevier B.V. All rights reserved.
引用
收藏
页数:10
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