μ-Si strain gauge array on flexible substrate for dynamic pressure measurement

被引：4

作者：

Castro, Fatima Garcia ^{[1
]}

de Sagazan, Olivier ^{[1
]}

Coulon, Nathalie ^{[1
]}

Corbera, Antoni Homs ^{[2
]}

Fassini, Dario ^{[2
]}

Cramer, Jeremy ^{[2
]}

Le Bihan, France ^{[1
]}

机构：

[1] Univ Rennes, IETR, CNRS, UMR 6164, F-35000 Rennes, France

[2] Cherry Biotech, F-35000 Rennes, France

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2020年 / 315卷 / 315期

关键词：

ICP-CVD; PECVD; Strain gauges array; TLM; mu-Si doped; Flexible electronics; Thin film pressure sensor; dynamic pressure measurement; blood pressure monitoring; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; SILICON; TEMPERATURE; TRANSISTORS; SENSOR; TFT;

D O I：

10.1016/j.sna.2020.112274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low Temperature mu-Si layers have been deposited by Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) to produce strain gauges. These strain gauges performed on 25 mu m thick flexible Kapton Polyimide (PI) were investigated in terms of Gauge Factor but also in dynamic mode through a homemade pneumatic test bench. Best strain gauge design has been identified and subsequently used to perform a 25 sensor array which was also tested using pulses and more complex signals. A simulation of blood pressure monitoring was performed to demonstrate the value of the technology. (C) 2020 Elsevier B.V. All rights reserved.

引用

页数：10

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