New magnetic flash memory with FePt magnetic floating gate

被引：2
|
作者：
Yin, Cheng-Kuan
Bea, Ji-Chel
Hong, Youn-Gi
Fukushima, Takafumi
Miyao, Masanobu
Natori, Kenji
Koyanagi, Mitsumasa
机构：
[1] Tohoku Univ, Dept Bioengn & Robot, Aoba Ku, Sendai, Miyagi 9808579, Japan
[2] Japan Sci & Technol Agcy JST, Aoba Ku, Sendai, Miyagi 9808579, Japan
[3] Kyushu Univ, Dept Elect, Higashi Ku, Fukuoka 8128581, Japan
[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期
关键词：
FePt; nonvolatile memory; floating gate; rapid thermal annealing;
D O I：
10.1143/JJAP.45.3217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel flash memory which has FePt magnetic floating gate was proposed. An FePt magnetic floating gate with a high coercivity was successfully fabricated by DC magnetron sputtering with rapid thermal annealing. As for magnetic properties, the switching magnetic fields of 21 Oe for the NiFe film and 1600 Oe for the FePt film were employed for the control gate and the floating gate materials, respectively. The fundamental characteristics of the magnetic flash memory were confirmed using magnetic metal oxide semiconductor (MOS) capacitor devices and magnetic tunneling diode (MTD) devices.
引用
收藏
页码：3217 / 3221
页数：5
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