Characterization of Sn-doped β-Ga2O3 films deposited on MgO (100) substrate by MOCVD

被引：21

作者：

Mi, Wei ^{[1
,2
]}

Ma, Jin ^{[2
]}

Li, Zhao ^{[2
]}

Luan, Caina ^{[2
]}

Xiao, Hongdi ^{[2
]}

机构：

[1] TianJin Univ Technol, Sch Elect Informat Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China

[2] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2015年 / 26卷 / 10期

基金：

中国国家自然科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; OPTICAL-PROPERTIES; GROWTH; NANORODS; XPS;

D O I：

10.1007/s10854-015-3440-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tin-doped gallium oxide (Ga2O3:Sn) films have been deposited on single crystalline MgO (100) substrates by metal organic chemical vapor deposition technique. The tin content was varied from 5 to 20 % (atomic ratio). After annealing in the atmosphere, all the samples show the beta phase with the epitaxial relationship of beta-Ga2O3 () ayen MgO (100). The average transmittance for the annealed samples in visible range exceeds 89 %. The resistivity of the films doped with Sn can be effectively decreased by almost five orders of magnitude. A narrow and strong violet photoluminescence from 390 to 430 nm is observed at room temperature and this violet emission is enhanced after Sn-doping.

引用

页码：7889 / 7894

页数：6

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